1/8 october 2000 STW6NC90Z n-channel 900v - 2.1 w - 5.2a to-247 zener-protected powermesh ? iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt capability n gate-to-source zener diodes n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description the third generation of mesh overlay ? power mosfets for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back zener diodes between gate and source. such arrangement gives extra esd capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. applications n single-ended smps in monitors, computer and industrial application n welding equipment absolute maximum ratings ( ? )pulse width limited by safe operating area (1)i sd 5.2a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax. type v dss r ds(on) i d STW6NC90Z 900 v < 2.5 w 5.2a symbol parameter value unit v ds drain-source voltage (v gs =0) 900 v v dgr drain-gate voltage (r gs =20k w ) 900 v v gs gate- source voltage 25 v i d drain current (continuos) at t c =25 c 5.2 a i d drain current (continuos) at t c = 100 c 3.3 a i dm (1) drain current (pulsed) 21 a p tot total dissipation at t c =25 c 160 w derating factor 1.52 w/ c i gs gate-source current (*) 50 ma v esd(g-s) gate source esd(hbm-c=100pf, r=15k w) 4kv dv/dt peak diode recovery voltage slope 3 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c (*) limited by maximum temperature allowed to-247
STW6NC90Z 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.78 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.2 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 200 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 900 v d bv dss / d t j breakdown voltage temp. coefficient i d =1ma,v gs =0 1v/ c i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 20v 10 m a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5a 2.1 2.5 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 5.2 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =2.5a 5.6 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 1840 pf c oss output capacitance 116 pf c rss reverse transfer capacitance 12 pf
3/8 STW6NC90Z electrical characteristics (continued) switching on (resistive load) switching off (inductive load) source drain diode gate-source zener diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. d v bv = a t(25 -t) bv gso (25 ) protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the 25v zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 450v, i d = 2.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 24 ns t r rise time 8 ns q g total gate charge v dd = 720v, i d =5a, v gs = 10v 40 56 nc q gs gate-source charge 9 nc q gd gate-drain charge 15 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d =5a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 12 ns t f fall time 13 ns t c cross-over time 20 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5.2 a i sdm (2) source-drain current (pulsed) 21 a v sd (1) forward on voltage i sd = 5 a, v gs =0 1.6 v t rr reverse recovery time i sd = 5 a, di/dt = 100a/ m s, v dd =50v,t j = 150 c (see test circuit, figure 5) 510 ns q rr reverse recovery charge 4 m c i rrm reverse recovery current 15 a symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 25 v a t voltage thermal coefficient t=25 c note(3) 1.3 10 -4 / c rz dynamic resistance i gs =50ma 90 w
STW6NC90Z 4/8 thermal impedance transconductance static drain-source on resistance output characteristics safe operating area transfer characteristics
5/8 STW6NC90Z capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temp. source-drain diode forward characteristics gate charge vs gate-source voltage
STW6NC90Z 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STW6NC90Z dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW6NC90Z 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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